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61.
62.
A stochastic model for local disturbances, particularly for a temporal harmonic with random modulations in amplitude and/or phase, is proposed in this paper. Results for the second moment responses of a linear single-degree-of-freedom system to this type of stochastic loading demonstrate a significant change in response characteristics due to a small uncertainty. A local phenomenon may last much longer and resonance may be smeared to a broad range. Integrated with wavelet transform, the proposed approach may be used to model a random process with non-stationary frequency content. Especially, it can be effectively used for Monte Carlo simulation to generate large size of samples that have similar characteristics in time and frequency domains as a pre-selected mother sample has. The technique has a great potential for the case where uncertainty study is warranted but the available samples are limited. 相似文献
63.
64.
In this work it is presented a study on the residence time distribution (RTD) of particles in a co-current pilot-plant spray dryer operated with a rotary atomization system. A nuclear technique is applied to investigate the RTD responses of spray dryers. The methodology is based on the injection of a radioisotope tracer in the feed stream followed by the monitoring of its concentration at the outlet stream. The experiments were performed during the drying of aqueous suspensions of gadolinium oxide. The RTD responses obtained experimentally presented good reproducibility, indicating that the technique applied is well suited to investigating fluid-dynamics of spray dryers. In addition to the experimental investigation, a mathematical model was used to describe the RTD experimental curves. 相似文献
65.
P. A. Boucard L. Champaney 《International journal for numerical methods in engineering》2003,57(9):1259-1281
The aim of the present work is to develop an application of the LArge Time INcrement (LATIN) approach for the parametric analysis of static problems with multiple contacts. The methodology adopted was originally introduced to solve viscoplastic and large‐transformation problems. Here, the applications concern elastic, quasi‐static structural assemblies with local non‐linearities such as unilateral contact with friction. Our approach is based on a decomposition of the assembly into substructures and interfaces. The interfaces play the vital role of enabling the local non‐linearities, such as contact and friction, to be modelled easily and accurately. The problem on each substructure is solved by the finite element method and an iterative scheme based on the LATIN method is used for the global resolution. More specifically, the objective is to calculate a large number of design configurations. Each design configuration corresponds to a set of values of all the variable parameters (friction coefficients, prestress) which are introduced into the mechanical analysis. A full computation is needed for each set of parameters. Here we propose, as an alternative to carrying out these full computations, to use the capability of the LATIN method to re‐use the solution to a given problem (for one set of parameters) in order to solve similar problems (for the other sets of parameters). Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
66.
67.
硅微机械梳齿静电谐振器的建模与分析 总被引:5,自引:2,他引:3
基于参数化的计算机辅助设计(CAD)软件,对硅微机械梳齿静电谐振器进行了实体建模,以有限元分析软件为工具,进行了谐振器的模态分析,静态分析和谐响应分析,初步揭示了谐振器的静、动态特性,有助于改善设计效率和质量,展示了计算机辅助工程(CAE)技术在微机电系统(MEMS)研究中的重要作用。 相似文献
68.
报导一种模糊逻辑控制系统的建模与优化方法。以此方法设计的模糊逻辑控制器,用于双波长稳频CO2激光器的控制得到令人满意的结果。 相似文献
69.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
70.
中国古典园林三维造型研究 总被引:1,自引:0,他引:1
论述了采用层次结构化及参数化三维造型方法,建立一个以造型函数库为核心,从而构造各类、各级园林景观构件表面模型的方法和过程。对于某些非建筑类的园林配景构件,采用了Fractal方法进行造型。 相似文献